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Gate control of the electron spin-diffusion length in semiconductor quantum wells
The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length co...
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| Autores principales: | , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Pub. Group
2013
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3791469/ https://ncbi.nlm.nih.gov/pubmed/24052071 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms3372 |
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