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Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy

Spin-polarized currents represent an efficient tool for manipulating ferromagnetic nanostructures but the critical current density necessary for the magnetization switching is usually too high for applications. Here we show theoretically that, in magnetic tunnel junctions having electric-field-depen...

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Detalhes bibliográficos
Autor principal: Pertsev, Nikolay A.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3782881/
https://ncbi.nlm.nih.gov/pubmed/24067783
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02757
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