Crack propagation and fracture in silicon wafers under thermal stress

The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures wher...

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Detaylı Bibliyografya
Asıl Yazarlar: Danilewsky, Andreas, Wittge, Jochen, Kiefl, Konstantin, Allen, David, McNally, Patrick, Garagorri, Jorge, Elizalde, M. Reyes, Baumbach, Tilo, Tanner, Brian K.
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: International Union of Crystallography 2013
Konular:
X-Ray Diffraction and Imaging
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC3769070/
https://ncbi.nlm.nih.gov/pubmed/24046487
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S0021889813003695
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