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Crack propagation and fracture in silicon wafers under thermal stress
The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures wher...
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| Auteurs principaux: | , , , , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
International Union of Crystallography
2013
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3769070/ https://ncbi.nlm.nih.gov/pubmed/24046487 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S0021889813003695 |
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