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Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity depen...

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Detalhes bibliográficos
Principais autores: Koivisto, Juha, Kiljunen, Timo, Wolff, Jan, Kortesniemi, Mika
Formato: Artigo
Idioma:Inglês
Publicado em: Oxford University Press 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3766287/
https://ncbi.nlm.nih.gov/pubmed/23520268
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1093/jrr/rrt015
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