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Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material
When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity depen...
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Principais autores: | , , , |
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Formato: | Artigo |
Idioma: | Inglês |
Publicado em: |
Oxford University Press
2013
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Assuntos: | |
Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3766287/ https://ncbi.nlm.nih.gov/pubmed/23520268 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1093/jrr/rrt015 |
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