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Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO(2) blocking layer
This study characterizes the charge storage characteristics of metal/HfO(2)/Au nanocrystals (NCs)/SiO(2)/Si and significantly improves memory performance and retention time by annealing the HfO(2) blocking layer in O(2) ambient at 400°C. Experimental evidence shows that the underlying mechanism can...
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| Hlavní autoři: | , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2013
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3765817/ https://ncbi.nlm.nih.gov/pubmed/23984794 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-368 |
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