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Enhanced and continuous electrostatic carrier doping on the SrTiO(3) surface
Paraelectrical tuning of a charge carrier density as high as 10(13) cm(−2) in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here...
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| Main Authors: | , , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group
2013
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3634102/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01721 |
| Clibeanna: |
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