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Enhanced and continuous electrostatic carrier doping on the SrTiO(3) surface

Paraelectrical tuning of a charge carrier density as high as 10(13) cm(−2) in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here...

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Bibliografske podrobnosti
Main Authors: Eyvazov, A. B., Inoue, I. H., Stoliar, P., Rozenberg, M. J., Panagopoulos, C.
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2013
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC3634102/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01721
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