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Modulation in current density of metal/n-SiC contact by inserting Al(2)O(3) interfacial layer
Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al(2)O(3) layer between metal and SiC to solve this problem simply but effective...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3614437/ https://ncbi.nlm.nih.gov/pubmed/23452618 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-116 |
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