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Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS(2), WS(2), WSe(2 )and MoSe(2) exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Terrones, Humberto, López-Urías, Florentino, Terrones, Mauricio
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group 2013
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3607896/
https://ncbi.nlm.nih.gov/pubmed/23528957
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01549
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