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Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides

Although bulk hexagonal phases of layered semiconducting transition metal dichalcogenides (STMD) such as MoS(2), WS(2), WSe(2 )and MoSe(2) exhibit indirect band gaps, a mono-layer of STMD possesses a direct band gap which could be used in the construction of novel optoelectronic devices, catalysts,...

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Detalhes bibliográficos
Main Authors: Terrones, Humberto, López-Urías, Florentino, Terrones, Mauricio
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3607896/
https://ncbi.nlm.nih.gov/pubmed/23528957
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01549
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