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Room-temperature efficient light detection by amorphous Ge quantum wells
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO(2) layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement e...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3605310/ https://ncbi.nlm.nih.gov/pubmed/23496870 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-128 |
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