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Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current–voltage characteristic of...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3602287/ https://ncbi.nlm.nih.gov/pubmed/23363692 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-55 |
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