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On the formation of blisters in annealed hydrogenated a-Si layers
Differently hydrogenated radio frequency-sputtered a-Si layers have been studied by infrared (IR) spectroscopy as a function of the annealing time at 350°C with the aim to get a deeper understanding of the origin of blisters previously observed by us in a-Si/a-Ge multilayers prepared under the same...
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| 主要な著者: | , , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2013
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3599494/ https://ncbi.nlm.nih.gov/pubmed/23413996 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-84 |
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