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Direct Transformation of Amorphous Silicon Carbide into Graphene under Low Temperature and Ambient Pressure
A large-scale availability of the graphene is critical to the successful application of graphene-based electronic devices. The growth of epitaxial graphene (EG) on insulating silicon carbide (SiC) surfaces has opened a new promising route for large-scale high-quality graphene production. However, tw...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3556591/ https://ncbi.nlm.nih.gov/pubmed/23359349 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep01148 |
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