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Gap modification of atomically thin boron nitride by phonon mediated interactions
A theory is presented for the modification of bandgaps in atomically thin boron nitride (BN) by attractive interactions mediated through phonons in a polarizable substrate, or in the BN plane. Gap equations are solved, and gap enhancements are found to range up to 70% for dimensionless electron-phon...
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2012
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3515422/ https://ncbi.nlm.nih.gov/pubmed/22697461 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-303 |
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