Carregant...
Dynamic-Load-Enabled Ultra-low Power Multiple-State RRAM Devices
Bipolar resistance-switching materials allowing intermediate states of wide-varying resistance values hold the potential of drastically reduced power for non-volatile memory. To exploit this potential, we have introduced into a nanometallic resistance-random-access-memory (RRAM) device an asymmetric...
Guardat en:
| Autors principals: | , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2012
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3473363/ https://ncbi.nlm.nih.gov/pubmed/23077728 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep00744 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|