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Dynamic-Load-Enabled Ultra-low Power Multiple-State RRAM Devices
Bipolar resistance-switching materials allowing intermediate states of wide-varying resistance values hold the potential of drastically reduced power for non-volatile memory. To exploit this potential, we have introduced into a nanometallic resistance-random-access-memory (RRAM) device an asymmetric...
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| Auteurs principaux: | , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Nature Publishing Group
2012
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3473363/ https://ncbi.nlm.nih.gov/pubmed/23077728 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep00744 |
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