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A Stochastic Model of Conductance Transitions in Voltage-Gated IonChannels
We present a statistical physics model to describe the stochastic behaviorof ion transport and channel transitions under an applied membrane voltage.To get pertinent ideas we apply our general theoretical scheme to ananalytically tractable model of the channel with a deep binding site whichinteracts...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Kluwer Academic Publishers
2002
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3456657/ https://ncbi.nlm.nih.gov/pubmed/23345775 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1023/A:1019987816498 |
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