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A Stochastic Model of Conductance Transitions in Voltage-Gated IonChannels

We present a statistical physics model to describe the stochastic behaviorof ion transport and channel transitions under an applied membrane voltage.To get pertinent ideas we apply our general theoretical scheme to ananalytically tractable model of the channel with a deep binding site whichinteracts...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Lee, Kwonmoo, Sung, Wokyung
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Kluwer Academic Publishers 2002
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC3456657/
https://ncbi.nlm.nih.gov/pubmed/23345775
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1023/A:1019987816498
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