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Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al(2)O(3) stack structure using an implant-free technique
In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al(2)O(3) gate stack using an implant-free approach. Since the source/drain and channel regions are sharing one in situ phosphorous-doped poly-Si material, the process flow and cost co...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2012
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3422205/ https://ncbi.nlm.nih.gov/pubmed/22726886 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-339 |
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