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Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge(2)Sb(2)Te(5) phase-change memory alloy
Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3344948/ https://ncbi.nlm.nih.gov/pubmed/22509004 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1119754109 |
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