APA aipamena

Xu, M., Cheng, Y. Q., Wang, L., Sheng, H. W., Meng, Y., Yang, W. G., . . . Ma, E. (2012). Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge(2)Sb(2)Te(5) phase-change memory alloy. National Academy of Sciences.

Chicago Style aipamena

Xu, M., Y. Q. Cheng, L. Wang, H. W. Sheng, Y. Meng, W. G. Yang, X. D. Han, and E. Ma. Pressure Tunes Electrical Resistivity By Four Orders of Magnitude in Amorphous Ge(2)Sb(2)Te(5) Phase-change Memory Alloy. National Academy of Sciences, 2012.

MLA aipamena

Xu, M., et al. Pressure Tunes Electrical Resistivity By Four Orders of Magnitude in Amorphous Ge(2)Sb(2)Te(5) Phase-change Memory Alloy. National Academy of Sciences, 2012.