Immobilization of enzyme and antibody on ALD-HfO(2)-EIS structure by NH(3 )plasma treatment

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH(3 )plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobiliza...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Wang, I-Shun, Lin, Yi-Ting, Huang, Chi-Hsien, Lu, Tseng-Fu, Lue, Cheng-En, Yang, Polung, Pijanswska, Dorota G, Yang, Chia-Ming, Wang, Jer-Chyi, Yu, Jau-Song, Chang, Yu-Sun, Chou, Chien, Lai, Chao-Sung
Formato: Artigo
Lenguaje:Inglês
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC3329401/
https://ncbi.nlm.nih.gov/pubmed/22401350
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-179
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares