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Focused ion beam induced deflections of freestanding thin films
Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10(14) and 10(17) ions/cm(2). Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding d...
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| Main Authors: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
2006
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3319714/ https://ncbi.nlm.nih.gov/pubmed/22485053 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.2363900 |
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