Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces

InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the sa...

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Autors principals: Li, Li-Gong, Liu, Shu-Man, Luo, Shuai, Yang, Tao, Wang, Li-Jun, Liu, Feng-Qi, Ye, Xiao-Ling, Xu, Bo, Wang, Zhan-Guo
Format: Artigo
Idioma:Inglês
Publicat: Springer 2012
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3305404/
https://ncbi.nlm.nih.gov/pubmed/22373387
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-160
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