Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces

InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the sa...

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Detalles Bibliográficos
Autores principales: Li, Li-Gong, Liu, Shu-Man, Luo, Shuai, Yang, Tao, Wang, Li-Jun, Liu, Feng-Qi, Ye, Xiao-Ling, Xu, Bo, Wang, Zhan-Guo
Formato: Artigo
Lenguaje:Inglês
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC3305404/
https://ncbi.nlm.nih.gov/pubmed/22373387
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-160
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