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Level Set Approach to Anisotropic Wet Etching of Silicon

In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by mea...

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Autores principales: Radjenović, Branislav, Radmilović-Radjenović, Marija, Mitrić, Miodrag
Formato: Artigo
Lenguaje:Inglês
Publicado: Molecular Diversity Preservation International (MDPI) 2010
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Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC3292156/
https://ncbi.nlm.nih.gov/pubmed/22399916
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s100504950
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