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Level Set Approach to Anisotropic Wet Etching of Silicon

In this paper a methodology for the three dimensional (3D) modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by mea...

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Bibliografiske detaljer
Main Authors: Radjenović, Branislav, Radmilović-Radjenović, Marija, Mitrić, Miodrag
Format: Artigo
Sprog:Inglês
Udgivet: Molecular Diversity Preservation International (MDPI) 2010
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3292156/
https://ncbi.nlm.nih.gov/pubmed/22399916
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s100504950
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