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Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10(-4). The full width at half max...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer
2011
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3276608/ https://ncbi.nlm.nih.gov/pubmed/22192726 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-635 |
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