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SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system
In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several di...
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| Autori principali: | , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2012
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3276418/ https://ncbi.nlm.nih.gov/pubmed/22221730 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-22 |
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