Room temperature ballistic transport in InSb quantum well nanodevices

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a neg...

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Bibliographische Detailangaben
Hauptverfasser: Gilbertson, A. M., Kormányos, A., Buckle, P. D., Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A., Cohen, L. F.
Format: Artigo
Sprache:Inglês
Veröffentlicht: American Institute of Physics 2011
Schlagworte:
Electronic Transport and Semiconductors
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3261050/
https://ncbi.nlm.nih.gov/pubmed/22275771
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3668107
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