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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices
The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Mini...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2006
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3246673/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-006-9004-x |
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