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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Mini...

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Detalhes bibliográficos
Main Authors: Talalaev, VG, Cirlin, GE, Tonkikh, AA, Zakharov, ND, Werner, P, Gösele, U, Tomm, JW, Elsaesser, T
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2006
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3246673/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-006-9004-x
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