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Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask
We demonstrate an enhanced photo-sensitivity (PS) through an increased light-trapping using surface nano-structuring technique by inductively coupled plasma (ICP) etching on multi-walled carbon nanotube (MWCNT) etch masked Si with hexamethyl-disilazane (HMDS) dispersion. In order for a systematic co...
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主要な著者: | , , , , |
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フォーマット: | Artigo |
言語: | Inglês |
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Springer
2011
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オンライン・アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3215771/ https://ncbi.nlm.nih.gov/pubmed/22040026 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-573 |
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