Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micr...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijät: Liu, Jianming, Liu, Xianlin, Li, Chengming, Wei, Hongyuan, Guo, Yan, Jiao, Chunmei, Li, Zhiwei, Xu, Xiaoqing, Song, Huaping, Yang, Shaoyan, Zhu, Qinsen, Wang, Zhanguo, Yang, Anli, Yang, Tieying, Wang, Huanhua
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Springer 2011
Aiheet:
Nano Express
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC3212216/
https://ncbi.nlm.nih.gov/pubmed/21711601
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-69
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