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Gallium arsenide solar cells grown at rates exceeding 300 µm h(−1) by hydride vapor phase epitaxy
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h(−1) using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demons...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6659644/ https://ncbi.nlm.nih.gov/pubmed/31350402 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-11341-3 |
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