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Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making...

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Bibliographische Detailangaben
1. Verfasser: Zdansky, Karel
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer 2011
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3212005/
https://ncbi.nlm.nih.gov/pubmed/21831273
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-490
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