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Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, α(H), is independent of doping ratio. The 1/f noise power spectral density and noise...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211346/ https://ncbi.nlm.nih.gov/pubmed/21711802 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-281 |
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