Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

Lignende værker

• CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth
  af: Arapkina, Larisa V, et al.
  Udgivet: (2011)
• A RHEED study of as-received and atomically clean Silicon surfaces in UHV-environment
  af: M. Maeder, et al.
  Udgivet: (1999)
• Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
  af: Yuryev, Vladimir A, et al.
  Udgivet: (2011)
• Reliable synthesis of self-running Ga droplets on GaAs (001) in MBE using RHEED patterns
  af: Trisna, Beni Adi, et al.
  Udgivet: (2015)
• Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C
  af: Storozhevykh, Mikhail S., et al.
  Udgivet: (2015)