Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 ×...

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Detalhes bibliográficos
Main Authors: Arapkina, Larisa V, Yuryev, Vladimir A, Chizh, Kirill V, Shevlyuga, Vladimir M, Storojevyh, Mikhail S, Krylova, Lyudmila A
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2011
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211275/
https://ncbi.nlm.nih.gov/pubmed/21711733
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-218
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