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Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers
GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, n...
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| Päätekijät: | , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Beilstein-Institut
2011
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3148065/ https://ncbi.nlm.nih.gov/pubmed/21977447 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.2.39 |
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