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Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al∕SiO(2)∕p-Si metal-insulator-semiconductor Schottky diodes
The dielectric properties and electrical conductivity of Al∕SiO(2)∕p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of −2 to 6 V have been investigated in detail using experimental C-V and G∕w-V measurements. Experimental results indicated that t...
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| Main Authors: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
American Institute of Physics
2011
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3146545/ https://ncbi.nlm.nih.gov/pubmed/21808425 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3602090 |
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