Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection

We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb∕In(1−x)Al(x)Sb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase...

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Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Gilbertson, A. M., Benstock, D., Fearn, M., Kormányos, A., Ladak, S., Emeny, M. T., Lambert, C. J., Ashley, T., Solin, S. A., Cohen, L. F.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: American Institute of Physics 2011
Gaiak:
Electronic Transport and Semiconductors
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC3048882/
https://ncbi.nlm.nih.gov/pubmed/21383870
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3554427
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