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Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors

The 1∕f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100–300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignif...

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Bibliografiske detaljer
Main Authors: Rajan, Nitin K., Routenberg, David A., Chen, Jin, Reed, Mark A.
Format: Artigo
Sprog:Inglês
Udgivet: American Institute of Physics 2010
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC3017570/
https://ncbi.nlm.nih.gov/pubmed/21221250
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3526382
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