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Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors
The 1∕f noise of silicon nanowire biochemical field effect transistors is fully characterized from weak to strong inversion in the temperature range 100–300 K. At 300 K, our devices follow the correlated Δn-Δμ model. As the temperature is lowered, the correlated mobility fluctuations become insignif...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
American Institute of Physics
2010
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3017570/ https://ncbi.nlm.nih.gov/pubmed/21221250 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.3526382 |
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