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Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth tempera...
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Main Authors: | , , , , , , , |
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Formato: | Artigo |
Idioma: | Inglês |
Publicado em: |
Springer
2010
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Assuntos: | |
Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2956041/ https://ncbi.nlm.nih.gov/pubmed/21076665 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9689-8 |
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