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Fabrication of Coaxial Si(1−x)Ge(x) Heterostructure Nanowires by O(2) Flow-Induced Bifurcate Reactions
We report on bifurcate reactions on the surface of well-aligned Si(1−x)Ge(x) nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si(1−x)Ge(x) nanowires were grown in a chemical vapor transport process using SiCl(4) gas and Ge powder as a source. After the growth...
Tallennettuna:
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer
2010
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2956027/ https://ncbi.nlm.nih.gov/pubmed/21076699 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9673-3 |
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