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Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spe...

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Detaylı Bibliyografya
Asıl Yazarlar: Antonuk, L.E., Koniczek, M., McDonald, J., El-Mohri, Y., Zhao, Q., Behravan, M.
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: 2008
Konular:
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC2941962/
https://ncbi.nlm.nih.gov/pubmed/20862269
Etiketler: Etiketle
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