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InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
The morphological and optical properties of In(0.2)Ga(0.8)As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In(0.2)Ga(0.8)As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substra...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2010
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2893973/ https://ncbi.nlm.nih.gov/pubmed/20672090 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9605-2 |
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