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Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InA...

Täydet tiedot

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Bibliografiset tiedot
Päätekijät: Dhawan, Tanuj, Tyagi, Renu, Bag, RajeshKumar, Singh, Mahavir, Mohan, Premila, Haldar, T, Murlidharan, R, Tandon, RP
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Springer 2009
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC2893438/
https://ncbi.nlm.nih.gov/pubmed/20651909
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-009-9439-y
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