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A model linking immediate serial recall, the Hebb repetition effect and the learning of phonological word forms

We briefly review the considerable evidence for a common ordering mechanism underlying both immediate serial recall (ISR) tasks (e.g. digit span, non-word repetition) and the learning of phonological word forms. In addition, we discuss how recent work on the Hebb repetition effect is consistent with...

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Detalhes bibliográficos
Main Authors: Page, M. P. A., Norris, D.
Formato: Artigo
Idioma:Inglês
Publicado em: The Royal Society 2009
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2846317/
https://ncbi.nlm.nih.gov/pubmed/19933143
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1098/rstb.2009.0173
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