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Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors
Nanowire field effect transistors (NW-FETs) can serve as ultrasensitive detectors for label-free reagents. The NW-FET sensing mechanism assumes a controlled modification in the local channel electric field created by the binding of charged molecules to the nanowire surface. Careful control of the so...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2007
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2713684/ https://ncbi.nlm.nih.gov/pubmed/17914853 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/nl071792z |
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