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Electrostatic Model of S4 Motion in Voltage-Gated Ion Channels

The S4 transmembrane domain of the family of voltage-gated ion channels is generally thought to be the voltage sensor, whose translocation by an applied electric field produces the gating current. Experiments on hSkMI Na(+) channels and both Shaker and EAG K(+) channels indicate which S4 residues cr...

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Detalhes bibliográficos
Main Authors: Lecar, Harold, Larsson, H. Peter, Grabe, Michael
Formato: Artigo
Idioma:Inglês
Publicado em: Biophysical Society 2003
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC1303566/
https://ncbi.nlm.nih.gov/pubmed/14581190
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