A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Main Authors: Chia-Hua Ho, Fu-Liang Yang, Chien-Chao Huang, Jian-Tai Qiu, Jim-Tong Horng, Chao-Hsin Chien, Tsung-Fan Hsieh, Hao-Yu Chen, Chia-Yi Lin, Min-Cheng Chen
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2012-03-01
Colecção:Sensors
Assuntos:
nano-sensor fabrication
nanowire FET
nonvolatile memories
semiconductive sensors
Acesso em linha:http://www.mdpi.com/1424-8220/12/4/3952/
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados