Wird geladen...
Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature
While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we re...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
AIP Publishing LLC
2020-05-01
|
| Schriftenreihe: | AIP Advances |
| Online Zugang: | http://dx.doi.org/10.1063/5.0009585 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|