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Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature
While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we re...
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| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2020-05-01
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| Col·lecció: | AIP Advances |
| Accés en línia: | http://dx.doi.org/10.1063/5.0009585 |
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